Sb and Bi on GaAs(110): Substrate-stabilized overlayer structures studied with scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.10221/fulltext
Reference34 articles.
1. Low energy electron microscopy of nanometer scale phenomena
2. Fermi-Level Pinning at the Sb/GaAs(110) Surface Studied by Scanning Tunneling Spectroscopy
3. Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy
4. Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) surface
5. Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi
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2. Cancellation of electron and hole contributions to the Hall effect in ultrathin Bi films grown on GaAs(110);Physical Review B;2022-05-31
3. Mapping the evolution of Bi/Ge(111) empty states: From the wetting layer to pseudo-cubic islands;Journal of Applied Physics;2021-04-21
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