Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.233303/fulltext
Reference22 articles.
1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
2. Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si
3. Dislocations in strained-layer epitaxy: theory, experiment, and applications
4. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
5. Low‐defect‐density germanium on silicon obtained by a novel growth phenomenon
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