Quantum Hall effect in silicon metal-oxide-semiconductor inversion layers: Experimental conditions for determination of h/e2-Reference-Cited by-同舟云学术

Quantum Hall effect in silicon metal-oxide-semiconductor inversion layers: Experimental conditions for determination of h/e2

Published:1986-05-15 Issue:10 Volume:33 Page:6874-6896
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Yoshihiro Kazuo,Kinoshita Joji,Inagaki Katsuya,Yamanouchi Chikako,Endo Tadashi,Murayama Yasushi,Koyanagi Masao,Yagi Atsuo,Wakabayashi Jun-ichi,Kawaji Shinji

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.6874/fulltext

Reference38 articles.

1. Magneto-Oscillatory Conductance in Silicon Surfaces

2. Two-dimensional electron gas at a semiconductor-semiconductor interface

3. Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition

4. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

5. Theory of Hall Effect in a Two-Dimensional Electron System

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