Reduced binding energy of the symmetric heavy-hole exciton in GaAs/AlxGa1−xAs symmetric coupled double quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.12853/fulltext
Reference8 articles.
1. Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules
2. Exciton states in coupled double quantum wells in a static electric field
3. Optical properties of excitons in GaAs/Al0.3Ga0.7As symmetric double quantum wells
4. Acceptor-bound excitons in GaAs/AlxGa1−xAs symmetric coupled-double-quantum-well structures
5. Observation of the excited level of excitons in GaAs quantum wells
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1. Exciton binding energy in a double quantum well: effect of the barrier shift;Superlattices and Microstructures;2002-07
2. Exciton states and diamagnetic shifts in symmetric coupled double GaAs-Ga1-xAlxAs quantum wells within the fractional-dimensional approach;Journal of Physics: Condensed Matter;2000-06-13
3. The Exciton Transition Energies in Symmetric Double GaAs/AlxGa1-xAs Quantum Wells;physica status solidi (b);1999-04
4. Exciton localization by a fractional monolayer of ZnTe inserted in a wide CdTe quantum well;Physical Review B;1995-12-15
5. Binding energies and diamagnetic shifts for free excitons in symmetric coupled double quantum wells;Physical Review B;1994-08-15
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