Contribution of local atomic arrangements and electronic structure to high electrical resistivity in theAl82.6−xRe17.4Six(7<~x<~12)1/1-1/1-1/1 approximant-Reference-Cited by-同舟云学术

Contribution of local atomic arrangements and electronic structure to high electrical resistivity in theAl82.6−xRe17.4Six(7<~x<~12)1/1-1/1-1/1 approximant

Published:2003-11-11 Issue:18 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Takeuchi T.,Onogi T.,Otagiri T.,Mizutani U.,Sato H.,Kato K.,Kamiyama T.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.184203/fulltext

Reference27 articles.

1. Stable Icosahedral Al–Pd–Mn and Al–Pd–Re Alloys

2. Formation Criteria and Growth Morphology of Quasicrystals in Al–Pd–TM (TM=Transition Metal) Alloys

3. Large AlCuLi single quasicrystals with triacontahedral solidification morphology

4. Enhanced Insulatorlike Electron Transport Behavior of Thermally Tuned Quasicrystalline States of Al-Pd-Re Alloys

5. Composition-Dependent Electrical Resistivity in an Al-Re-Si 1/1-Cubic Approximant Phase: An Indication of Electron Confinement in Clusters

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