Photoinduced change in the density of localized states near the conduction band of dopeda-Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.1706/fulltext
Reference19 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
3. Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide
4. Electron-nuclear double-resonance experiments in hydrogenated amorphous silicon
5. Defects in Amorphous Silicon: A New Perspective
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2. Electron irradiation effects on the properties of heavily phosphorus-doped a-Si : H films prepared from undiluted silane;Journal of Physics D: Applied Physics;2008-10-01
3. Trapping effects in a-Si:H investigated by the SSPG technique;Journal of Non-Crystalline Solids;1993-12
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