Impurity and Landau-level electron lifetimes inn-type GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.3560/fulltext
Reference23 articles.
1. Saturation of Impurity Cyclotron Resonance and Effect of 337 µm Radiation on Carrier Numbers and Mobilities in n-InSb
2. Landau-Level-Electron Lifetimes inn-InSb
3. Dielectric Studies on the Phase Transitions of {(NH4)3H(SO4)2}1-x{(ND4)3D(SO4)2}x System –Ferroelectricity in (NH4)3H(SO4)2–
4. Far-Infrared Two-Photon Transitions inn-GaAs
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