EPR identification of two types of carbon vacancies in4H−SiC-Reference-Cited by-同舟云学术

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EPR identification of two types of carbon vacancies in4H−SiC

Published:2004-03-22 Issue:12 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Umeda T.,Isoya J.,Morishita N.,Ohshima T.,Kamiya T.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.121201/fulltext

Reference10 articles.

1. Nitrogen donors in 4H‐silicon carbide

2. Site-dependent donor and acceptor levels in 6 H-SiC

3. EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide

4. Signature of intrinsic defects in SiC:Ab initiocalculations of hyperfine tensors

5. Calculation of Hyperfine Constants of Defects in 4H-SiC

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1. Positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC;Physical Review Materials;2023-09-08

2. Simulation Study of Carbon Vacancy Trapping Effect on Low Power 4H-SiC MOSFET Performance;Silicon;2021-01-06

3. Tuning vacancy and size of metallic VCx quantum dots for capacitive potassium-ion batteries;Chemical Engineering Journal;2021-01

4. Electron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-SiC;Nanotechnology and Precision Engineering;2019-12

5. First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO 2 /4H–SiC Interface;physica status solidi (a);2019-08-12

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