Effect of growth rate on the spatial distributions of dome-shaped Ge islands on Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.195407/fulltext
Reference29 articles.
1. Spontaneous ordering of nanostructures on crystal surfaces
2. Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor
3. Self-aligning of self-assembled Ge islands on Si(001)
4. Relaxed template for fabricating regularly distributed quantum dot arrays
5. Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples
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