Ultrafast laser-induced order-disorder transitions in semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.14186/fulltext
Reference70 articles.
1. Some features of laser annealing of implanted silicon layers
2. Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in Silicon
3. Time-resolved second-harmonic study of femtosecond laser-induced disordering of GaAs surfaces
4. Ultrafast electronic disordering during femtosecond laser melting of GaAs
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