Electron mobilities and quantum Hall effect in modulation-doped HgTe-CdTe superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.8376/fulltext
Reference13 articles.
1. Present status of molecular beam epitaxial growth and properties of HgTe–CdTe superlattices
2. Band-gap-dependent electron and hole transport inp-type HgTe-CdTe superlattices
3. Negative energy gap in HgTe-CdTe heterostructures with thick wells
4. Electron transport and cyclotron resonance in [211]‐oriented HgTe–CdTe superlattices
5. Electrical measurements of molecular‐beam epitaxy HgTe–CdTe superlattices and absorption coefficient analysis of molecular‐beam epitaxy HgTe
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1. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010
2. Superlattice and Quantum Well;Device Physics of Narrow Gap Semiconductors;2009-08-28
3. The influence of interfaces and the modulation doping technique on the magneto-transport properties of HgTe based quantum wells;physica status solidi (c);2007-09
4. p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors;Journal of Electronic Materials;2006-06
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