Local vibrations at vacancies and the nature of theT1−S0emission band ofMcenters in ZnS
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.27.2412/fulltext
Reference11 articles.
1. Luminescence of an M center in ZnS?
2. Tight-binding calculation of the properties of theFcenter and of isoelectronic defects in ZnS
3. Treatment of the electronic structure of the F+ centre in some 11-VI semiconductors in an effective-charge point-ion-lattice approximation
4. F+centres in wurtzite lattices. I. The effects of host lattice covalence
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1. Defects in wide band gap II-VI crystals;Materials Science and Engineering: R: Reports;1997-11
2. The sum rule for the luminescence of semiconductors doped with transition metal impurities;Journal of Physics: Condensed Matter;1994-01-03
3. Growth Mechanism of ZnS:Mn Films Obtained by Hydrogen Plasma Sputtering and Its Application to a Thin-Film Electroluminescent Device;Japanese Journal of Applied Physics;1993-04-15
4. Zero phonon lines of the M-center in ZnS crystals;Journal of Luminescence;1988-02
5. Correlation between the 1.1 and 1.45 eV Emission Bands and the F+ Optical Absorption Bands in ZnS Crystals;physica status solidi (b);1987-09-01
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