Effect of the anisotropic form factor on the phonon-electron interaction and phonon transport in As-doped Ge
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.11085/fulltext
Reference23 articles.
1. Influence of internal stress on electron-phonon interaction inn-type germanium and silicon at low temperatures
2. Phonon conductivity of p-type Ge-11 in the intermediate concentration region at low temperatures
3. Thermal phonon scattering at singlet-triplet donor states in cubic semiconductors
4. Thermal Conductivity of Solids IV: Resonance Fluorescence Scattering of Phonons by Donor Electrons in Germanium
5. Acoustic Attenuation by Neutral Donor Impurity Atoms in Germanium
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1. Electron-phonon interaction and phonon conductivity in Li-doped silicon with intermediate donor concentration;The European Physical Journal B - Condensed Matter;2002-12-01
2. Interference between the elastic phonon scatterings by bound electrons and point defects;Physica B: Condensed Matter;2002-09
3. Phonon conductivity in As-, Sb-, and P-doped Ge for intermediate donor concentration;Physical Review B;1998-05-15
4. Phonon Conductivity in Arsenic Doped Germanium at Low Temperature for Intermediate Donor Concentration;Solid State Phenomena;1997-08
5. Dilatation part of the phonon-electron interaction and phonon conductivity of lightly doped silicon and germanium;Physical Review B;1993-02-01
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