Origin of the ESR signal withg=2.0055 in amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.9697/fulltext
Reference19 articles.
1. Defects in Amorphous Silicon: A New Perspective
2. Hyperfine studies of dangling bonds in amorphous silicon
3. Electron-nuclear double resonance of dangling-bond centres in a-Si:H
4. Microscopic nature of coordination defects in amorphous silicon
5. Quantitative analysis of EPR and electron-nuclear double resonance spectra ofDcenters in amorphous silicon: Dangling versus floating bonds
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