Band-gap-related energies of threading dislocations and quantum wells in group-III nitride films as derived from electron energy loss spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.035302/fulltext
Reference30 articles.
1. The role of threading dislocations in the physical properties of GaN and its alloys
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4. Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
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