Valence subband structure of [100]-, [110]-, and [111]-grown GaAs-(Al,Ga)As quantum wells and the accuracy of the axial approximation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.4285/fulltext
Reference12 articles.
1. Determination of valence-band effective-mass anisotropy in GaAs quantum wells by optical spectroscopy
2. Low lying conduction states in (GaAs)n(AlAs)n superlattices
3. Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wells
4. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory
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