Perpendicular transport ina-Si:H/a-SiNx:H single- and double-barrier structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.11521/fulltext
Reference24 articles.
1. Amorphous Semiconductor Superlattices
2. Dimensional quantization ina-Si:H quantum-well structures: The alloy model
3. Initial Stages of Trapping ina-Si:H Observed by Femtosecond Spectroscopy
4. Femtosecond spectroscopic determination of the properties of free carriers in a-Si:H
5. Picosecond optical time-of-flight studies of carrier transport ina-Si:H–a-SiNx:H multilayers
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1. Quantum confinement and band offsets in amorphous silicon quantum wells;Physical Review B;2014-09-18
2. Search for quantumconfinement effects in ultrathin layers of hydrogenated amorphous silicon;Philosophical Magazine B;1998-01-01
3. Observation of zero differential resistivity in a-Si:H barriers — on the absence of quantum confinement in amorphous semiconductors for high fields;Journal of Non-Crystalline Solids;1996-05
4. Electrical Properties of the Multilayer Structures Based on Ultrathin Diamond-Like Carbon Films;MRS Proceedings;1996
5. Physical properties ofa-Si:H based compositional periodic multilayers;Physical Review B;1995-09-15
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