Electronic properties of (ZnSe)m(Cd1−xZnxSe)nsuperlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.7569/fulltext
Reference11 articles.
1. Room‐temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice‐matched (Ga,In)As substrates
2. Blue‐green laser diodes
3. Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs
4. Atomic structure and properties of polar Ge-GaAs(100) interfaces
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1. Transfer matrix method for calculating UV–Vis reflectivity/transmission spectra to assess thickness of nanostructured zb CdSe and ZnSe films grown on GaAs (001);Applied Physics A;2022-12-17
2. ELECTRONIC BAND STRUCTURES OF THE STRAINED (ZnSe)m(CdSe)n(001) SUPERLATTICES;International Journal of Modern Physics B;2008-11-10
3. INSIGHTS ON THE BOUND STATES IN THE STRAINED CdSe–ZnSe SINGLE-QUANTUM WELLS;International Journal of Modern Physics B;2008-05-20
4. Charge confinements in CdSe–ZnSe symmetric double quantum wells;Journal of Physics: Condensed Matter;2008-03-31
5. Band structure and confined energy levels of the Si3N4/Si/GaAs system;Journal of Applied Physics;1997-07
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