Strain-induced semiconductor to metal transition in MA2Z4 bilayers ( M=Ti,Cr,Mo ; A=Si ; Z=N,P )-Reference-Cited by-同舟云学术

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Strain-induced semiconductor to metal transition in MA2Z4 bilayers ( M=Ti,Cr,Mo ; A=Si ; Z=N,P )

Published:2021-02-17 Issue:8 Volume:103 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhong Hongxia^ORCID,Xiong Wenqi,Lv Pengfei,Yu Jin^ORCID,Yuan Shengjun^ORCID

Funder

National Basic Research Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Wuhan University

Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.085124/fulltext

Reference46 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Two-dimensional gas of massless Dirac fermions in graphene

4. The rise of graphene

5. Room-Temperature Quantum Hall Effect in Graphene

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3. Ferroelectricity in two-dimensional bilayers and multilayers of MgAl2S4;Surfaces and Interfaces;2024-05

4. Electronic and Optical Properties of Two-Dimensional MoSi₂P₄/BAs Heterostructures;The Journal of Physical Chemistry C;2024-05-01

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