Characterization of Si-doped GaAs cross-sectional surfaces viaab initiosimulations
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.085341/fulltext
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1. Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
2. Nano-scale properties of defects in compound semiconductor surfaces
3. Microscopic Mechanisms of Self-Compensation in Siδ-Doped GaAs
4. Importance of carrier dynamics and conservation of momentum in atom-selective STM imaging and band gap determination of GaAs(110)
5. Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs
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2. Substitutional Co dopant on the GaAs(110) surface: A first principles study;Physica B: Condensed Matter;2016-12
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4. Electronic Structure and Magnetic Properties of Doped GaAs (Zinc Blende) with Double Impurities and Defects;Journal of Superconductivity and Novel Magnetism;2013-02-23
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