Large-rform for the potential due to an impurity ion in a medium with spatially variable dielectric constant-Reference-Cited by-同舟云学术

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Large-rform for the potential due to an impurity ion in a medium with spatially variable dielectric constant

Published:1981-02-15 Issue:4 Volume:23 Page:1527-1533
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Brownstein K. R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.23.1527/fulltext

Reference8 articles.

1. XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors

2. Theory of the screening of impurity ions in semiconductors with spatially-variable dielectric constants

3. A variational treatment of the potential of impurity ions in semiconductors with spatially variable dielectric constants

4. Electron mobility in semiconductors based on a dielectric-function modification of the Dingle potential

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Statistical model of the localized electron in dilute ionic solutions;International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry;1991-01

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