Excitons in Si nanocrystals: Confinement and migration effects-Reference-Cited by-同舟云学术

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Excitons in Si nanocrystals: Confinement and migration effects

Published:2004-05-21 Issue:19 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Heitmann Johannes,Müller Frank,Yi Lixin,Zacharias Margit,Kovalev Dmitri,Eichhorn Frank

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.195309/fulltext

Reference30 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Porous silicon formation: A quantum wire effect

3. Effect of different preparation conditions on light emission from silicon implanted SiO2 layers

4. Luminescence properties of nanometer-sized Si crystallites: Core and surface states

5. Light emission from ion beam induced silicon nanoclusters in silicon dioxide: role of cluster–cluster interactions via a thin oxide

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2. Barrier-dependent photoluminescence of silicon nanocrystals in quadlayer samples: Inter-layer Si diffusion or excitonic energy transfer?;Thin Solid Films;2024-08

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