Electric fields and valence-band offsets in n+n [001] and [110] ZnSe/GaAs, GaAs/Ge, and ZnSe/Ge superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.10402/fulltext
Reference13 articles.
1. Theoretical study of band offsets at semiconductor interfaces
2. Dipole effects and band offsets at semiconductor interfaces
3. Theory of Semiconductor Heterojunction Valence-Band Offsets: From Supercell Band-Structure Calculations toward a Simple Model
4. Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs
5. Comparison of dipole layers, band offsets, and formation enthalpies of GaAs-AlAs(110) and (001) interfaces
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