Evidence for a new type of metal-semiconductor interaction on GaSb
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.17.2682/fulltext
Reference8 articles.
1. Fermi Level Position at Metal-Semiconductor Interfaces
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3. Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAs
4. Covalent bonding of metal atoms at the Schottky‐barrier interface of GaAs, Ge, and Si
5. Chemical Bonding and Structure of Metal-Semiconductor Interfaces
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