Large- versus small-lattice-relaxation models of theDXcenters inGa1−xAlxAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.3276/fulltext
Reference30 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Long‐lifetime photoconductivity effect inn‐type GaAlAs
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. A new model of deep donor centres in AlxGa1-xAs
5. A New Model of Deep Donor Centers in AlxGa1-xAs
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