Theory of oxygen chemisorption on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.18.6999/fulltext
Reference26 articles.
1. Chemisorption-Site Geometry from Polarized Photoemission: Si(111)Cl and Ge(111)Cl
2. Electronic structure of Al chemisorbed on the Si (111) surface
3. Hydrogen chemisorption on Si(111)
4. Hydrogen Chemisorption on Si: A New Type of Chemisorptive Bond
5. Theoretical calculations of H interacting with Si(100) 1 × 1
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1. X-ray photoelectron-diffraction analysis of oxygen chemisorption on the GaAs(110) surface;Physical Review B;1996-05-15
2. Chemisorption of metals or electronegative atoms on GaAs;Physica Scripta;1992-01-01
3. X‐ray photoelectron spectroscopy study of electron stimulated reactions in oxidized GaAs(1̄1̄1̄);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-05
4. Chemically modified GaAs Schottky barrier variation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-07
5. Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces;Physical Review B;1988-09-15
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