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Submillisecond electron spin relaxation in InP quantum dots

Published:2005-10-03 Issue:15 Volume:72 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ikezawa Michio,Pal Bipul,Masumoto Yasuaki,Ignatiev Ivan V.,Verbin Sergey Yu.,Gerlovin Il’ya Ya.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.153302/fulltext

Reference17 articles.

1. Semiconductor Spintronics and Quantum Computation

2. Spin relaxation in semiconductor quantum dots

3. Resonant Spin Amplification inn-Type GaAs

4. Optically Driven Spin Memory inn-Doped InAs-GaAs Quantum Dots

5. Zeeman Energy and Spin Relaxation in a One-Electron Quantum Dot

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band structure, g -factor, and spin relaxation in n -type InAsP alloys;Physical Review B;2023-09-14

2. Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure;Advanced Electronic Materials;2022-08-15

3. Spin memory effect in charged single telecom quantum dots;Optics Express;2021-10-04

4. Spin field effect transistors and their applications: A survey;Microelectronics Journal;2020-12

5. Tuning the Radiative Lifetime in InP Colloidal Quantum Dots by Controlling the Surface Stoichiometry;The Journal of Physical Chemistry Letters;2020-11-16

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