Structural evolution during annealing of laser-ablation-deposited Ge-Sn-Se amorphous films
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.2516/fulltext
Reference25 articles.
1. Universal structural phase transition in network glasses
2. Correlation of electrical conductivity with Mössbauer and Raman results in the alloy glass g-Ge1−xSnxSe20
3. Photostructural changes in bulk amorphous Ge1−xSnxSe2
4. Preparation and characterization of laser-ablated multicomponent chalcogenide thin films
5. Determination of the thickness and optical constants of amorphous silicon
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