Exact linear admittance ofn+-n-n+semiconductor structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.5447/fulltext
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1. NUMERICAL ANALYSIS OF THE FINITE ELEMENT METHOD APPLIED TO THE BOLTZMANN-POISSON SYSTEM;Mathematical Models and Methods in Applied Sciences;1995-05
2. Numerical simulation of non-homogeneous submicron semiconductor devices by a deterministic particle method;Solid-State Electronics;1993-06
3. A deterministic particle method for the kinetic model of semiconductors: The homogeneous field model;Solid-State Electronics;1991-12
4. Particle simulations of the semiconductor boltzmann equation for one-dimensional inhomogeneous structures;Journal of Computational Physics;1990-09
5. Deterministic particle simulations of the boltzmann transport equation of semiconductors;Journal of Computational Physics;1988-10
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