Normalized reflection spectra in GaAs/InxGa1−xAs single quantum wells: Structure characterizations and excitonic properties
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.10713/fulltext
Reference18 articles.
1. Exciton quantization in symmetric and asymmetric quantum wells: Pseudo-two-dimensional behavior
2. Exciton properties and optical response inInxGa1−xAs/GaAs strained quantum wells
3. Center-of-mass quantization of excitons in CdTe/Cd1−xZnxTe quantum wells
4. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory
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1. Exciton and polariton dispersion curves ofInxGa1−xAs∕GaAs(001)superlattice quantum wells: Model calculation;Physical Review B;2007-02-14
2. Optical properties of Ga 1− x In x As/GaAs(001) quantum well superlattices: Exciton and polariton dispersion curves;physica status solidi (c);2004-04
3. Spectroscopic Signatures of the Alloy-Alloy Interface in InGaAs-GaAs(001) Stepped Quantum Wells: a Frequency- and Time-Resolved Study;Advanced Engineering Materials;2002-08-06
4. Spontaneous quantum dot formation at InxGa1−xAs∣InyGa1−yAs interfaces;Materials Science and Engineering: B;2002-04
5. Exciton localization in alloy/alloy interfaces of InGaAs/GaAs(001) stepped quantum wells;Springer Proceedings in Physics;2001
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