Layer structures under in-plane compressive strains inAlxGa1−xN/AlNinterfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.073305/fulltext
Reference19 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. High transconductance-normally-off GaN MODFETs
4. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
5. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
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1. Phase identification from electronic structures by Auger electron spectroscopy;Journal of Materials Research;2008-01
2. Phase transition of ultrathin AlN interlayer at AlGaN∕GaN interface;Applied Physics Letters;2007-03-19
3. Analysis of GaN-based single-mode rib waveguide with large cross section;Journal of Micro/Nanolithography, MEMS, and MOEMS;2006-07-01
4. Thickness-Dependent Phase Transition of AlxGa1-xN Thin Films on Strained GaN;The Journal of Physical Chemistry B;2006-05-10
5. High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN;Applied Physics Letters;2005-05-23
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