Microscopic symmetry properties of (001) Si/Ge monolayer superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.5188/fulltext
Reference16 articles.
1. Effect of buffer-layer composition on new optical transitions in Si/Ge short-period superlattices
2. Silicon-germanium alloys and heterostructures: Optical and electronic properties
3. Silicon/germanium strained layer superlattices
4. Improvement of structural properties of Si/Ge superlattices
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1. Chapter 2 Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures;Semiconductors and Semimetals;1997
2. Transverse interplanar forces and phonon spectra of strained Si, Ge, and Si/Ge superlattices;Physical Review B;1996-03-01
3. Electronic and optical properties of Ge-Si superlattices;Progress in Quantum Electronics;1994-01
4. Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition;Journal of Electronic Materials;1993-03
5. Sn and Sb segregation and their possible use as surfactant for short-period Si/Ge superlattices;Journal of Crystal Growth;1993-02
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