Excited states of defect linear arrays in silicon: A first-principles study based on hydrogen cluster analogs-Reference-Cited by-同舟云学术

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Excited states of defect linear arrays in silicon: A first-principles study based on hydrogen cluster analogs

Published:2018-01-29 Issue:3 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wu W.,Greenland P. T.,Fisher A. J.,Le Nguyen H.,Chick S.,Murdin B. N.

Funder

Engineering and Physical Sciences Research Council

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.035205/fulltext

Reference65 articles.

1. Silicon quantum electronics

2. Atomically Precise Placement of Single Dopants in Si

3. Spatial metrology of dopants in silicon with exact lattice site precision

4. Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory

5. Ohm’s Law Survives to the Atomic Scale

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots;Nature Communications;2022-11-11

2. Conundrum of weak-noise limit for diffusion in a tilted periodic potential;Physical Review E;2021-09-07

3. Excited states of a phosphorus pair in silicon: Combining valley-orbital interaction and electron-electron interactions;Physical Review B;2021-07-28

4. Ultrafast Carrier Recombination and Transient Lattice Temperature Changes in 25 nm Thin Hydrogenated Amorphous Silicon Films;ACS Applied Electronic Materials;2019-10-22

5. Radii of Rydberg states of isolated silicon donors;Physical Review B;2018-08-15

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