Assessing exchange-correlation functional performance in the chalcogenide lacunar spinels GaM4Q8 (M=Mo, V, Nb, Ta; Q=S,Se)
Author:
Funder
National Science Foundation
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.115149/fulltext
Reference55 articles.
1. First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D SystemGaTa4Se8
2. Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8
3. On the multiferroic skyrmion-host GaV4S8
4. Electronic and Structural Instabilities in GaV4S8 and GaMo4S8
5. Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
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