Warm and hot carriers in silicon surface-inversion layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.10.3375/fulltext
Reference24 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
2. The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface
3. The mobility of electrons heated by microwave fields in n-type germanium
4. Energy-Diffusion Equation in Hot-Electron Problems: Disturbance of the Polar-Optical-Phonon Distribution
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