Study of time-resolved luminescence in GaAs doping superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.5937/fulltext
Reference11 articles.
1. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
2. Effect of an electric field on the luminescence of GaAs quantum wells
3. Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice
4. Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices
5. Electron States in Crystals with “nipi-Superstructure”
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4. Electronic and Structural Properties of As-Grown and ?-Particle Irradiated GaAs Doping Superlattices;physica status solidi (b);1998-12
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