Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study-Reference-Cited by-同舟云学术

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Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study

Published:2015-04-09 Issue:16 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhu Zhen,Guan Jie,Tománek David

Funder

National Science Foundation

Michigan State University

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.161404/fulltext

Reference39 articles.

1. Energy Band-Gap Engineering of Graphene Nanoribbons

2. Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

3. Measurement of mobility in dual-gated MoS2 transistors

4. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

5. Semiconducting Layered Blue Phosphorus: A Computational Study

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