Effects of higher sub-band occupation in (100) Si inversion layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.13.2519/fulltext
Reference8 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
2. Negative Field-Effect Mobility on (100) Si Surfaces
3. Magneto-Oscillatory Conductance in Silicon Surfaces
4. Observation of Higher Sub-band inn-Type (100) Si Inversion Layers
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