Spin-orbit splitting of the valence bands in silicon determined by means of high-resolution photoconductive spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.6287/fulltext
Reference9 articles.
1. Effects of Spin-Orbit Coupling in Si and Ge
2. Internal Impurity Levels in Semiconductors: Experiments inp-Type Silicon
3. Spectroscopic Investigation of Group-III Acceptor States in Silicon
4. Additionalp32andp12infrared excited-state lines of gallium and indium in silicon
5. Additional structure in infrared excitation spectra of group-III acceptors in silicon
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