Photoemission study of surface states of the (110) GaAs surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.13.725/fulltext
Reference39 articles.
1. Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom
2. Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs
3. Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of Silicon
4. Electronic properties of clean cleaved {110} GaAs surfaces
5. Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)
Cited by 55 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination;Applied Physics Letters;2010-06-28
2. High-resolution, hard x-ray photoemission investigation ofBaFe2As2: Moderate influence of the surface and evidence for a low degree ofFe 3d–As 4phybridization of electronic states near the Fermi energy;Physical Review B;2009-03-24
3. Basic principles governing the surface atomic structure of zinc blende semiconductors;Materials Science and Engineering: B;1993-12
4. Photochemical etching of GaAs with Cl2 induced by synchrotron radiation;Applied Physics A Solids and Surfaces;1993-11
5. Basic principles governing the surface atomic structure of zinc blende semiconductors;European Materials Research Society Symposia Proceedings;1993
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3