Two-dimensional distribution of As atoms doped in a Si crystal by atomic-resolution high-angle annular dark field STEM-Reference-Cited by-同舟云学术

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Two-dimensional distribution of As atoms doped in a Si crystal by atomic-resolution high-angle annular dark field STEM

Published:2000-05-15 Issue:20 Volume:61 Page:13833-13839
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Yamazaki T.,Watanabe K.,Kikuchi Y.,Kawasaki M.,Hashimoto I.,Shiojiri M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.13833/fulltext

Reference32 articles.

1. Molecular image resolution in electron microscopy

2. High‐Resolution Electron Microscopy of Crystal Lattice of Titanium‐Niobium Oxide

3. Lattice imaging of a grain boundary in crystalline germanium

4. Polarity and inversion twins in ZnSe crystals observed by high-resolution electron microscopy

5. High-resolution imaging of silicon (111) using a 100 keV STEM

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1. Three-dimensional analysis of Eu dopant atoms in Ca-α-SiAlON via through-focus HAADF-STEM imaging;Ultramicroscopy;2017-04

2. Estimating the Spatial Distribution of Ca Dopants in α-SiAlON by Statistical Analysis of HAADF-STEM Image;MATERIALS TRANSACTIONS;2017

3. Imaging techniques in STEM;Journal of Japan Institute of Light Metals;2014-04-30

4. Detection of Indiviual Asenic Atoms in the Doped Silicon Crystal;Journal of the Vacuum Society of Japan;2011

5. A Scan Through the History of STEM;Scanning Transmission Electron Microscopy;2010-12-16

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