Band-gap bowing inAgGa(Se1−xTex)2and its effect on the second-order response coefficient and refractive indices
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.205206/fulltext
Reference32 articles.
1. Crystal Growth and Optical Properties of AgGaS2 and AgGaSe2
2. Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor
3. Strong enhancement of second-order response coefficients in tellurium containing Ag–III–VI2 compounds
4. Second-harmonic generation of I-III-VI2chalcopyrite semiconductors: Effects of chemical substitutions
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2. Investigation of the Structural and the Electronic Properties of AgGaX2(X = S, Se, Te) Nanolayers in the [112] Direction by using Density Functional Theory;Journal of the Korean Physical Society;2020-05
3. Optical constants and electronic energy-band structure of AgGaSe2;Japanese Journal of Applied Physics;2014-06-18
4. Optical absorption and photoreflectance spectroscopy of the single-crystalline chalcopyrite semiconductor AgGaSe2;Journal of Applied Physics;2013-05-07
5. Electronic Structures and Optical Properties of AgGa(S1-xSex)2 Solid Solutions;Acta Physico-Chimica Sinica;2013
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