Resonant tunneling magnetoresistance in MnAs∕III-V∕MnAs junctions-Reference-Cited by-同舟云学术

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Resonant tunneling magnetoresistance in MnAs∕III-V∕MnAs junctions

Published:2005-08-09 Issue:8 Volume:72 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Garcia V.,Jaffrès H.,Eddrief M.,Marangolo M.,Etgens V. H.,George J.-M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.081303/fulltext

Reference23 articles.

1. Magnetoelectronics

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

4. Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem

5. Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

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1. The transport properties of InAs nanowires: an introduction to MnAs/InAs heterojunction nanowires for spintronics;Journal of Physics D: Applied Physics;2020-06-11

2. Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy;Molecular Beam Epitaxy;2019-02-08

3. Finite size effect on the structural and magnetic properties of MnAs/GaAs(001) patterned microstructures thin films;Scientific Reports;2017-12

4. Low-temperature growth of fully epitaxial CoFe/Ge/Fe3Si layers on Si for vertical-type semiconductor spintronic devices;Semiconductor Science and Technology;2017-08-17

5. In situobservation of ferromagnetic order breaking in MnAs/GaAs(001) and magnetocrystalline anisotropy ofα-MnAs by electron magnetic chiral dichroism;Physical Review B;2016-03-11

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