Photoluminescence studies of planar-doped GaAs-Ga1−xAlxAs multiple-quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.9772/fulltext
Reference31 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
3. Shallow donors in multiple-well GaAs-Ga1−xAlxAs heterostructures
4. Binding energies of acceptors in GaAs-AlxGa1−xAsquantum wells
5. Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells
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3. Photoluminescence characterization technique for resonant-tunneling structures based on a long-period GaAs/AlGaAs superlattice, applicable at different stages of fabrication;Russian Microelectronics;2007-07
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