Influence ofNdoping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass inInSb1−xNxnanowires: Ten-bandk∙pmodel
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.205331/fulltext
Reference38 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Derivation of a 10-band model for dilute nitride semiconductors
3. Influence of conduction-band nonparabolicity on electron confinement and effective mass inGaNxAs1−x∕GaAsquantum wells
4. Electronic structure ofInyGa1−yAs1−xNx∕GaAs(N)quantum dots by ten-bandk∙ptheory
5. Comparison of electronic band structure and optical transparency conditions ofInxGa1−xAs1−yNy∕GaAsquantum wells calculated by 10-band, 8-band, and 6-bandk∙pmodels
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