Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires-Reference-Cited by-同舟云学术

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Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires

Published:2015-03-24 Issue:12 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Petretto Guido,Massé Andrea,Fanciulli Marco,Debernardi Alberto

Funder

Fondazione Cariplo

Universite Catholique de Louvain

Fonds De La Recherche Scientifique - FNRS

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.125430/fulltext

Reference44 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. High Performance Silicon Nanowire Field Effect Transistors

3. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

4. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

5. Single-nanowire electrically driven lasers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indirect to direct gap transition in low-dimensional nanostructures of Silicon and Germanium;Physica E: Low-dimensional Systems and Nanostructures;2017-06

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