Low-temperature electron mobility in a real δ-doped semiconductor
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.7658/fulltext
Reference21 articles.
1. Low-temperature electron mobility in a δ-doped semiconductor
2. Experimental and theoretical mobility of electrons in δ‐doped GaAs
3. Electronic properties of delta -doped GaAs
4. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
5. Subband physics for a “realistic” δ-doping layer
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2. Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor;Acta Physica Polonica A;2006-09
3. Low-temperature electron mobility in a strictly 2D layer;Physica E: Low-dimensional Systems and Nanostructures;2006-06
4. Effect of band nonparabolicity on mobility in a δ-doped semiconductor;Physical Review B;1999-09-15
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