Si diffusion in GaAs and Si-induced interdiffusion in GaAs/AlAs superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.2985/fulltext
Reference32 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials
3. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion
4. Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
5. Alternative mechanisms for the diffusion of Sn and Zn in GaAs
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