Electronic structure of the vacuum-semiconductor, metal-semiconductor, and semiconductor-semiconductor (111) interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.23.2995/fulltext
Reference26 articles.
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1. Interface states at ZnSe/Ge heterojunctions: the role of atomic interdiffusion and disorder;Applied Physics Letters;2002-12-30
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3. Effect of atomic relaxation on the valence band offset and the interface states in ZnS/ZnSe(110) superlattices;Surface Science;1999-07
4. Huge electric fields in Ge/GaAs (001) and (111) superlattices and their effect on interfacial stability;Physical Review B;1990-02-15
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