Ge(100) 2×1 andc(4×2) surface reconstructions studied byab initiototal-energy molecular-force calculations
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.2249/fulltext
Reference46 articles.
1. Total-energy calculations of semiconductor surface reconstructions
2. Theory of reconstruction induced subsurface strain — application to Si(100)
3. Electronic states of Si(100) reconstructed surfaces
4. Structure of the Si(100)2×1 surface: Total-energy and force analysis of the dimer models
5. Tunneling microscopy of Ge(001)
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2. Adsorption of Homotrifunctional 1,2,3-Benzenetriol on a Ge(100)-2 × 1 Surface;Langmuir;2017-06-02
3. Zintl layer formation during perovskite atomic layer deposition on Ge (001);The Journal of Chemical Physics;2017-02-07
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